Infineon IRL3713STRLPBF
$ 7.61
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Modelos CAD
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Price @ 1000
$ 7.61
$ 2.99
$ 2.99
Stock
70,967
57,750
57,750
Authorized Distributors
2
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
2.5 V
2.5 V
2.5 V
Rds On Max
3 mΩ
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
5.89 nF
5.89 nF
5.89 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
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Descripciones
Descripciones de Infineon IRL3713STRLPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS +/-2
Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 260A D2PAK
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - D2PAK
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
IRL3713STRLPBF,MOSFET, 30V, 20 0A, 3 MOHM, 75 NC QG, LOGIC L
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:200A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
MOSFET, N, 30V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:170A; Cont Current Id @ 25°C:200A; Current Id Max:260A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:330W; Pulse Current Idm:1040A; Rth:0.45; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.89 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
On-State Resistance3 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max3 mΩ
Resistance3 MΩ
Rise Time160 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.5 V
Turn-Off Delay Time40 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento