Infineon IRL1404ZPBF
$ 1.15
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -3.57%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRL1404ZPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Price @ 1000
$ 1.15
$ 1.34
Stock
438,086
115,599
Authorized Distributors
4
3
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220-3
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
75 A
160 A
Threshold Voltage
2.7 V
1.4 V
Rds On Max
3.1 mΩ
3.1 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
230 W
200 W
Input Capacitance
5.08 nF
5.08 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
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Descripciones
Descripciones de Infineon IRL1404ZPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.5Milliohms;ID 200A;TO-220AB;PD 230W;-55de
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 40 V 5.9 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 40V 200A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 120A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 40V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:3.1mohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:790A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:2.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.7V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -3.57%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.1 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5.08 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs2.7 V
Number of Channels1
Number of Elements1
On-State Resistance3.1 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation230 W
Rds On Max3.1 mΩ
Recovery Time39 ns
Resistance3.1 MΩ
Rise Time180 ns
Schedule B8541290080
Threshold Voltage2.7 V
Turn-Off Delay Time30 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)40 V
Dimensions
Height19.15 mm
Length10.6426 mm
Width4.82 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento