Infineon IRF2804PBF
$ 1.13
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Precio y existencias
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Historial de existencias
Tendencia de 3 meses: -0.17%
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-10-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
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Mosfet Transistor, N Channel, 77 A, 40 V, 6.2 Mohm, 10 V, 3 V Rohs Compliant: Yes
Descripciones
Descripciones de Infineon IRF2804PBF suministradas por sus distribuidores.
Transistor MOSFET N Channel 40 Volt 280.6 Amp 3 Pin 3+ Tab TO-220
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 280A;TO-220AB;PD 330W;-55de
Single N-Channel 40 V 2.3 mOhm 240 nC HEXFET® Power Mosfet - TO-220-3
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 300 W
40V 75A 300W 2.3m´Î@10V75A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Trans MOSFET N-CH 40V 280A 3-Pin(3+Tab) TO-220
Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 40V, 270A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:270A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF2804PBF.
MOSFET, N, 40V, 280A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:280A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270A; Device Marking:IRF2804PBF; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:2.3ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:1080A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -0.17%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.3 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.45 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance2.3 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation300 W
Rds On Max2.3 mΩ
Recovery Time84 ns
Resistance2.3 Ω
Rise Time120 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)40 V
Dimensions
Height19.1 mm
Length10.6426 mm
Width4.826 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento