Infineon IRL1004PBF
$ 1.8
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +64.49%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRL1004PBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | 3D | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 1.8
$ 1.8
Stock
340,918
340,918
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
130 A
130 A
Threshold Voltage
1 V
1 V
Rds On Max
6.5 mΩ
6.5 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
200 W
200 W
Input Capacitance
5.33 nF
5.33 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-09-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-02-11
LTD Date2009-08-11
Componentes relacionados
InfineonIRL3803PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;TO-220AB;PD 200W;VGS +/-16V
InfineonIRL1404PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4 Milliohms;ID 160A;TO-220AB;PD 200W;gFS 93S
Descripciones
Descripciones de Infineon IRL1004PBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0065Ohm;ID 130A;TO-220AB;PD 200W;VGS +/-16
Single N-Channel 40 V 0.0065 Ohm 100 nC HEXFET® Power Mosfet - TO-220-3
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 130A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:130A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes
MOSFET, N, 40V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 6.5 / Gate-Source Voltage V = 16 / Fall Time ns = 14 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +64.49%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)130 A
Current Rating130 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5.33 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance6.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max6.5 mΩ
Resistance6.5 mΩ
Rise Time210 ns
TerminationThrough Hole
Threshold Voltage1 V
Turn-Off Delay Time25 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)40 V
Dimensions
Height20.56 mm
Length10.6426 mm
Width4.82 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento