onsemi FDP8870
$ 0.838
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.838
$ 0.715
Stock
166,392
75,139
Authorized Distributors
2
2
Mount
Through Hole
-
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
19 A
75 A
Threshold Voltage
2.5 V
-
Rds On Max
4.1 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
160 W
145 W
Input Capacitance
5.2 nF
-
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-04-15
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
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30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
InfineonIRL3713PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
Descripciones
Descripciones de onsemi FDP8870 suministradas por sus distribuidores.
N-Channel 30 V 4.1 mOhm Flange Mount PowerTrench® Mosfet - TO-220
N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ
30 V, 156 A, 4.1 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)19 A
Current Rating160 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.2 nF
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
Power Dissipation160 W
Rds On Max4.1 mΩ
Resistance4.1 MΩ
Rise Time105 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time70 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento