Infineon IRFZ44NSTRLPBF
$ 0.628
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRFZ44NSTRLPBFCT-ND | 39 | 1 | Cut Tape | ||||||||
| Avnet | IRFZ44NSTRLPBF | 13.600 | 800 | 10h | ||||||||
| Newark | IRFZ44NSTRLPBF | 4187 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFZ44NSTRLPBF | 48.000 | 800 | Tape & Reel | ||||||||
| Arrow Electronics | IRFZ44NSTRLPBF | 3448 | 1 |
Historial de existencias
Tendencia de 3 meses: +35.46%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRFZ44NSTRLPBF.
Modelos CAD
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Este componente
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Price @ 1000
$ 0.628
$ 1.12
Stock
1,048,804
144,739
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
49 A
49 A
Threshold Voltage
-
2 V
Rds On Max
17.5 mΩ
17.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
1.47 nF
1.47 nF
Cadena de suministros
Country of OriginMainland China, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusProduction (Last Updated: 2 months ago)
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Descripciones
Descripciones de Infineon IRFZ44NSTRLPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 49A 3-Pin (2+Tab) D2PAK T/R
IRFZ44NSTRLPBF,MOSFET, 55V, 49 A, 17.5 MOHM, 42 NC QG, D2-PA
HEXFET POWER MOSFET Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:49A; On Resistance Rds(On):0.0175Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +35.46%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)49 A
Current Rating49 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.47 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance17.5 mΩ
Package Quantity800
PackagingTape and Reel
Power Dissipation3.8 W
Rds On Max17.5 mΩ
Resistance17.5 MΩ
Rise Time60 ns
Schedule B8541290080
Turn-Off Delay Time44 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height4.826 mm
Length10.668 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRFZ44NSTRLPBF.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento