Infineon IRFS3806PBF
$ 1.43
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 1.43
$ 0.57
Stock
488,562
459,282
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
43 A
43 A
Threshold Voltage
4 V
-
Rds On Max
15.8 mΩ
15.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
71 W
71 W
Input Capacitance
1.15 nF
1.15 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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Descripciones
Descripciones de Infineon IRFS3806PBF suministradas por sus distribuidores.
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - D2PAK
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 43A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:D2-PAK; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)43 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance15.8 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time47 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation71 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance15.8 mΩ
Package Quantity1000
Power Dissipation71 W
Rds On Max15.8 mΩ
Recovery Time33 ns
Rise Time40 ns
Threshold Voltage4 V
Turn-Off Delay Time49 ns
Turn-On Delay Time6.3 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento