Infineon IRFS3306PBF
$ 3.61
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
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Price @ 1000
$ 3.61
$ 1.29
$ 1.29
Stock
68,360
420,894
420,894
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
120 A
120 A
120 A
Threshold Voltage
4 V
4 V
4 V
Rds On Max
4.2 mΩ
4.2 mΩ
4.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
230 W
230 W
230 W
Input Capacitance
4.52 nF
4.52 nF
4.52 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descripciones
Descripciones de Infineon IRFS3306PBF suministradas por sus distribuidores.
IRFS3306PBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin DPAK
Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 60V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3306; Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:230mW; Pulse Current Idm:620A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Current Rating160 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4.2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.52 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.2 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max4.2 mΩ
Recovery Time31 ns
Resistance4.2 MΩ
Rise Time46 ns
Threshold Voltage4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)60 V
Dimensions
Height5.084 mm
Length6.73 mm
Width6.22 mm
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento