Infineon IRFR4105PBF
$ 0.51
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Componentes relacionados
InfineonIRFR4105TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 27A;D-Pak (TO-252AA);PD 68W
InfineonIRFR4105TRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 27A;D-Pak (TO-252AA);PD 68W
InfineonIRLR2705TRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
onsemiHUF75321D3S
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 20A DPAK
Descripciones
Descripciones de Infineon IRFR4105PBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 27A;D-Pak (TO-252AA);PD 68W
Single N-Channel 55 V 0.045 Ohm 34 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 25A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:46W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:27A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:46W; Power Dissipation Pd:46W; Pulse Current Idm:100A; SMD Marking:IRFR5104; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating25 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance45 mΩ
Package Quantity3000
Power Dissipation48 W
Rds On Max45 mΩ
Recovery Time86 ns
Resistance45 mΩ
Rise Time49 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time31 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento