Infineon IRFR3504ZTRPBF
$ 1.025
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFR3504ZTRPBF | 6035 | 3h | |||||||||
| DigiKey | IRFR3504ZPBFCT-ND | 81 | 1 | Cut Tape | ||||||||
| Newark | IRFR3504ZTRPBF | 0 | 5 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRFR3504ZTRPBF | 0 | 6K | Bulk | 2d | |||||||
| Farnell | IRFR3504ZTRPBF | 12.583 | 5 | Cut Tape | 1d |
Historial de existencias
Tendencia de 3 meses: -0.06%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRFR3504ZTRPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 1.025
$ 0.872
$ 0.872
Stock
625,803
82,966
82,966
Authorized Distributors
6
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
-
2 V
2 V
Rds On Max
9 mΩ
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
90 W
90 W
90 W
Input Capacitance
1.51 nF
1.51 nF
1.51 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-12-28
LTD Date2013-06-28
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Descripciones
Descripciones de Infineon IRFR3504ZTRPBF suministradas por sus distribuidores.
Single N-Channel 40V 9 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:77A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 77 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 38 / Rise Time ns = 74 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 90
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -0.06%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Current42 A
Current Rating42 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.51 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation90 W
Rds On Max9 mΩ
Resistance9 MΩ
Rise Time74 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time15 ns
Voltage40 V
Voltage Rating (DC)40 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento