Infineon IRFB3206PBF

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
$ 1.04
Production

Precio y existencias

Fichas técnicas y documentos

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Newark

Datasheet12 páginasHace 12 años
Datasheet11 páginasHace 18 años

IHS

iiiC

DigiKey

Historial de existencias

Tendencia de 3 meses:
-13.73%

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Componentes alternativos

Este componente
Componentes alternativos
Price @ 1000
$ 1.04
$ 1.52
Stock
1,172,087
265,213
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
4 V
-
Rds On Max
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
6.54 nF
6.54 nF

Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-27
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2026-05-31
LTD Date2026-11-30

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Descripciones

Descripciones de Infineon IRFB3206PBF suministradas por sus distribuidores.

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, TO-220AB, Pb-Free
Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3206PBF
Single N-Channel 60V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W
HEXFET Power MOSFET Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3206; Current Id Max:210A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300mW; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • IRFB 3206
  • IRFB 3206 PBF
  • IRFB 3206PBF
  • IRFB3206
  • IRFB3206 PBF
  • IRFB3206-PBF
  • IRFB3206PBF .
  • IRFB3206PBF.
  • SP001566480