Infineon IRF8010PBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg

Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3+ Tab TO-220AB

Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm, TO-220AB, Through Hole

Infineon NChannelMOSTube, Vds=100 V, 80 A, TO-220ABencapsulation, Through hole mounting

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V