Infineon IRF2807PBF

MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 13 Milliohms; ID 82A; TO-220AB; PD 230W; gFS 38S
$ 0.782
NRND

Precio y existencias

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IRF2807PBF.

Newark

Datasheet8 páginasHace 15 años

IHS

Factory Futures

Mouser

Jameco

Historial de existencias

Tendencia de 3 meses:
+10.33%

Modelos CAD

Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRF2807PBF desde uno de nuestros socios de confianza.

ORIGENeCADmCADARCHIVOS
Component Search Engine
SímboloFootprint
3DDescargar
EE Concierge
SímboloFootprint
SnapEDA
Footprint
3DDescargar
Ultra Librarian
SímboloFootprint
Descargar
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.

Componentes alternativos

Este componente
Componentes alternativos
Price @ 1000
$ 0.782
$ 1.1
Stock
2,501,636
76,457
Authorized Distributors
6
3
Mount
Surface Mount, Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
4 V
2 V
Rds On Max
13 mΩ
13 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
230 W
Input Capacitance
3.82 nF
3.82 nF

Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusNRND (Last Updated: 3 months ago)

Componentes relacionados

InfineonIRF1010EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
InfineonIRF1010NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;TO-220AB;PD 180W;gFS 32S
InfineonIRF2807ZPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 89A;TO-220AB;PD 170W;-55deg
onsemiFDP75N08A
N-Channel Power MOSFET, UniFETTM, 75 V, 75 A, 11 mΩ, TO-220
N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
N-Channel PowerTrench® MOSFET 75V, 80A, 6mΩ

Descripciones

Descripciones de Infineon IRF2807PBF suministradas por sus distribuidores.

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S
Single N-Channel 75 V 13 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 75 V, 71 A, 0.013 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 80V 82A 3-Pin(3+Tab) TO-220AB
N Channel Mosfet, 75V, 82A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:82A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF2807PBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 82 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 230
MOSFET, N, 75V, 82A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:82A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:13mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • 2807PBF
  • IRF 2807PBF
  • IRF2807
  • IRF2807 PBF
  • IRF2807-PBF
  • IRF2807PBF.
  • SP001550978