Infineon IRF7424TRPBF
$ 0.491
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRF7424TRPBF | 5500 | 1 | |||||||||
| DigiKey | IRF7424PBFCT-ND | 6178 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | IRF7424TRPBF | 0 | 4K | Bulk | 12h | |||||||
| Avnet | 39M3571 | 0 | 1 | 4d | ||||||||
| Farnell | IRF7424TRPBF | 11.370 | 5 | Cut Tape | 16h |
Historial de existencias
Tendencia de 3 meses: -18.17%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRF7424TRPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | SímboloFootprint | Descargar |
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Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.491
$ 0.351
Stock
598,712
1,065,736
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOP
Drain to Source Voltage (Vdss)
-30 V
30 V
Continuous Drain Current (ID)
11 A
12 A
Threshold Voltage
-2.5 V
-
Rds On Max
13.5 mΩ
14 mΩ
Gate to Source Voltage (Vgs)
20 V
25 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
4.03 nF
1.802 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-04
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
Componentes relacionados
InfineonIRF7424PBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
VishaySI4425DDY-T1-GE3
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
Descripciones
Descripciones de Infineon IRF7424TRPBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
Single P-Channel 30V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 11A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Power MOSFET, P Channel, 30 V, 11 A, 0.0135 ohm, SOIC, Surface Mount
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
P CHANNEL MOSFET, 11A; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-11A; Package/Case:8-SOIC; Power Dissipation, Pd:2.5W; Drain Source On Resistance @ 10V:13.5mohm; Drain Source On Resistance @ 4.5V:22mohm ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -18.17%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)-30 V
Fall Time76 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max13.5 mΩ
Resistance13.5 MΩ
Rise Time23 ns
Schedule B8541290080
Threshold Voltage-2.5 V
Turn-Off Delay Time150 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento