Infineon IRF540ZPBF
$ 0.534
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +30.38%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
Modelos CAD
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Price @ 1000
$ 0.534
$ 1.528
Stock
698,269
131,033
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
36 A
36 A
Threshold Voltage
4 V
2 V
Rds On Max
26.5 mΩ
26.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
92 W
92 W
Input Capacitance
1.77 nF
1.77 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-05-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2009-08-19
LTD Date2010-02-19
Componentes relacionados
InfineonIRF1310NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V
InfineonIRF540NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
Descripciones
Descripciones de Infineon IRF540ZPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V
Single N-Channel 100 V 26.5 mOhm 42 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 92 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 100V, 36A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF540ZPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
MOSFET, N, 100V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:36A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:26.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +30.38%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)36 A
Current Rating36 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance26.5 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time39 ns
Forward Voltage1.3 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.77 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation91 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance26.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation92 W
Rds On Max26.5 mΩ
Recovery Time50 ns
Resistance26.5 Ω
Rise Time51 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)100 V
Dimensions
Height19.15 mm
Length10.54 mm
Width4.69 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento