Infineon IRF540NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-220AB; Pd 130W; -55DEG
$ 0.569
Production
Página del fabricanteFicha técnica

Precio y existencias

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DistributorSKUMinPkg
NewarkIRF540NPBF65.2581
Future Electronics
3
IRF540NPBF10.95640Tube
Arrow Electronics
3
IRF540NPBF123.6591
DigiKeyIRF540NPBF-ND88801Tube
Avnet
2
63J731901
1d

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IRF540NPBF.

IHS

Datasheet10 páginasHace 22 años
Datasheet9 páginasHace 25 años

Newark

RS (Formerly Allied Electronics)

DigiKey

Jameco

Historial de existencias

Tendencia de 3 meses:
-47.24%
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Cadena de suministros

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-09-01
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descripciones

Descripciones de Infineon IRF540NPBF suministradas por sus distribuidores.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
RS (Formerly Allied Electronics)
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
Future Electronics
Power MOSFET, N Channel, 100 V, 33 A, 44 Milliohms, TO-220AB, 3 Pins, Through Hole
EBV Elektronik
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 33A/100V TO220 IRF 540 N PBF
Rapid Electronics
Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB
Verical
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W
Distrelec
HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd
Farnell
N CHANNEL, MOSFET, 100V, 33A, TO-220AB;; N CHANNEL, MOSFET, 100V, 33A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Res; Available until stocks are exhausted
element14 APAC
N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF540NPBF.
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon

Imágenes

Infineon
DKO Electronshik
element14 APAC
TME
B+D Enterprises
RS
RS
Micros
Conrad
RS (Formerly Allied Electronics)
iiiC
Jameco
South Microelectronics
IBS Electronics
Distrelec
International Rectifier
Jameco
LCSC
Newark

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • 540N
  • 540NPBF
  • IRF 540 N PBF
  • IRF 540N
  • IRF 540NPBF
  • IRF-540N
  • IRF540 N
  • IRF540N
  • IRF540N PBF
  • IRF540N.
  • IRF540NPBF.
  • IRF540NPBF....
  • SP001561906