Infineon IRF4905LPBF
$ 1.22
Production
Precio y existencias
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Distribuidores no autorizados
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Distribuidor
SKU
Mín.
Pkg
Precios por volumen
Historial de existencias
Tendencia de 3 meses: +70.79%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
Modelos CAD
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|---|---|---|---|
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 EE Concierge | SímboloFootprint | ||
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Price @ 1000
$ 1.22
$ 1.77
Stock
263,865
91,738
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-262
TO-262
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
4 V
-
Rds On Max
20 mΩ
20 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
170 W
170 W
Input Capacitance
3.5 nF
3.5 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-08-25
Lifecycle StatusProduction (Last Updated: 2 months ago)
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Descripciones
Descripciones de Infineon IRF4905LPBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 20Milliohms;ID -70A;TO-262;PD 170W;gFS 19S
Transistor MOSFET P Channel 55 Volt 74 Amp 3-Pin 3+ Tab TO-262
Single P-Channel 55 V 20 mOhm 180 nC HEXFET® Power Mosfet - TO-262-3
MOSFET P-CH 55V 42A TO262 P-Channel 55 V 42A (Tc) 170W (Tc) Through Hole TO-262
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Infineon PChannel EnhancedMOSTube HEXFETseries, Vds=55 V, 74 A, I2PAK (TO-262)encapsulation, Through hole mounting, 3Pin
MOSFET, P CH, 55V, 74A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:55V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-262AB; Current Id Max:-74A; Package / Case:TO-262; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -42 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 20 / Fall Time ns = 64 / Rise Time ns = 99 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = I2PAK / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 170
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +70.79%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Current Rating-74 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation170 W
Rds On Max20 mΩ
Rise Time99 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time51 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-55 V
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento