Infineon IRFZ44NLPBF
$ 1.202
Obsolete
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2008-03-13
LTD Date2008-09-13
Componentes relacionados
Descripciones
Descripciones de Infineon IRFZ44NLPBF suministradas por sus distribuidores.
MOSFET N-CH 55V 49A TO262 "N-Channel 55 V 49A (Tc) 3.8W (Ta), 94W (Tc) Through Hole TO-262"
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) | MOSFET N-CH 55V 49A TO-262
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Infineon NChannel EnhancedMOSTube HEXFETseries, Vds=55 V, 49 A, I2PAK (TO-262)encapsulation, Through hole mounting, 3Pin
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:49A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
N Channel Mosfet, 55V, 49A, To-262; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:49A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFZ44NLPBF
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
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Especificaciones técnicas
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)49 A
Current Rating49 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.47 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance17.5 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max17.5 mΩ
Resistance17.5 MΩ
Rise Time60 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time44 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento