Infineon IRF3710ZPBF
$ 0.576
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +4.99%
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Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
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Price @ 1000
$ 0.576
$ 4.29
Stock
596,635
64,215
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
59 A
59 A
Threshold Voltage
4 V
2 V
Rds On Max
18 mΩ
18 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
160 W
160 W
Input Capacitance
2.9 nF
2.9 nF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-05-10
Lifecycle StatusProduction (Last Updated: 4 months ago)
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 11Milliohms;ID 73A;TO-220AB;PD 190W;-55deg
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V
Descripciones
Descripciones de Infineon IRF3710ZPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg
Transistor MOSFET N Channel 100 Volt 59 Amp 3-Pin 3+ Tab TO-220AB
Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W
AUTOMOTIVE HEXFET POWER MOSFET Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF3710ZPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:170mJ; Capacitance Ciss Typ:2900pF; Current Id Max:59A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:18mohm; Package / Case:TO-220AB; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Power Dissipation Ptot Max:160W; Pulse Current Idm:240A; Reverse Recovery Time trr Typ:50ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +4.99%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)59 A
Current Rating59 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance18 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation160 W
Rds On Max18 mΩ
Recovery Time75 ns
Resistance18 MΩ
Reverse Recovery Time50 ns
Rise Time77 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time41 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)100 V
Dimensions
Height19.8 mm
Lead Pitch2.54 mm
Length10.54 mm
Width4.69 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento