onsemi MMBT2907ALT1G

Transistor, Bipolar; Si; PNP; General Purpose; VCEO -60VDC; IC -600mA; PD 225mW; hFE 50
Production

Precio y existencias

Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados

Especificaciones técnicas

Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage-60 V
Collector Emitter Saturation Voltage-1.6 V
Collector Emitter Voltage (VCEO)-60 V
Current Rating-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min75
Max Breakdown Voltage60 V
Max Collector Current-600 mA
Max Frequency200 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency200 MHz
TypeGeneral Purpose
Voltage Rating (DC)-60 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm

Documentos

Descargar fichas técnicas y documentación del fabricante para onsemi MMBT2907ALT1G.

Upverter
Datasheet6 pages13 years ago
Datasheet6 pages13 years ago
Datasheet6 pages14 years ago
Datasheet6 pages16 years ago
Datasheet6 pages7 years ago
Technical Drawing1 page4 years ago
TME
Datasheet6 pages10 years ago
Newark
Datasheet6 pages8 years ago
Datasheet7 pages7 years ago
Arrow Electronics
Datasheet6 pages12 years ago
iiiC
Datasheet6 pages12 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages16 years ago

Historial de existencias

3 month trend:
-28.97%

Componentes alternativos

Price @ 1000
$ 0.03
$ 0.027
$ 0.027
Stock
19,059,586
13,468,907
13,468,907
Authorized Distributors
8
13
13
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
SOT-23
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-60 V
-60 V
-60 V
Max Collector Current
-600 mA
-600 mA
-600 mA
Transition Frequency
200 MHz
200 MHz
200 MHz
Collector Emitter Saturation Voltage
-1.6 V
-1.6 V
-1.6 V
hFE Min
75
100
100
Power Dissipation
225 mW
350 mW
350 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi MMBT2907ALT1G.

Componentes relacionados

Descripciones

Descripciones de onsemi MMBT2907ALT1G suministradas por sus distribuidores.

Transistor, Bipolar; Si; PNP; General Purpose; VCEO -60VDC; IC -600mA; PD 225mW; hFE 50
60V 300mW 100@150mA,10V 600mA PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Trans General Purpose BJT PNP 60 Volt 1.2A 3-Pin SOT-23 Tape and Reel
Trans GP BJT PNP 60V 1.2A 350mW Automotive 3-Pin SOT-23 T/R
MMBT2907AL Series 60 V 600 mA SMT PNP General Purpose Transistor - SOT-23
Transistor, PNP, -60V, -600MA, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power
Bipolar Transistor, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:60V; Continuous Collector Current:600Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:200Mhzrohs Compliant: Yes |Onsemi MMBT2907ALT1G.
TRANSISTOR, PNP, -60V, -600MA, SOT-23-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -600mA; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C

Alias de fabricantes

onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • MMBT2907 ALT1G
  • MMBT2907ALT1/G
  • MMBT2907ALT1G.

Especificaciones técnicas

Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage-60 V
Collector Emitter Saturation Voltage-1.6 V
Collector Emitter Voltage (VCEO)-60 V
Current Rating-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min75
Max Breakdown Voltage60 V
Max Collector Current-600 mA
Max Frequency200 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency200 MHz
TypeGeneral Purpose
Voltage Rating (DC)-60 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm

Documentos

Descargar fichas técnicas y documentación del fabricante para onsemi MMBT2907ALT1G.

Upverter
Datasheet6 pages13 years ago
Datasheet6 pages13 years ago
Datasheet6 pages14 years ago
Datasheet6 pages16 years ago
Datasheet6 pages7 years ago
Technical Drawing1 page4 years ago
TME
Datasheet6 pages10 years ago
Newark
Datasheet6 pages8 years ago
Datasheet7 pages7 years ago
Arrow Electronics
Datasheet6 pages12 years ago
iiiC
Datasheet6 pages12 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages16 years ago

Cumplimiento

Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago