Infineon IRL6342PBF

Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC Tube
Obsolete

Precio y existencias

Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados

Especificaciones técnicas

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.025 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.1 V
Number of Elements1
On-State Resistance14.6 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max14.6 mΩ
Recovery Time20 ns
Rise Time12 ns
Threshold Voltage1.1 V
Turn-Off Delay Time33 ns
Turn-On Delay Time6 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm

Documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IRL6342PBF.

Newark
Datasheet8 pages13 years ago

Componentes alternativos

Este componente
Componentes alternativos
Price @ 1000
$ 0.208
$ 0.208
Stock
114,384
817,786
817,786
Authorized Distributors
0
12
12
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
9.9 A
9.9 A
9.9 A
Threshold Voltage
1.1 V
1.1 V
1.1 V
Rds On Max
14.6 mΩ
14.6 mΩ
14.6 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
12 V
Power Dissipation
2.5 W
2.5 W
2.5 W
Input Capacitance
1.025 nF
1.025 nF
1.025 nF

Supply Chain

Lifecycle StatusObsolete (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRL6342PBF.

Componentes relacionados

Descripciones

Descripciones de Infineon IRL6342PBF suministradas por sus distribuidores.

Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC Tube
MOSFET N-Channel 30V 9.9A HEXFET SOIC8
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Logic Level | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
MOSFET, N CH, 30V, 9.9A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Pulse Current Idm:79A; Voltage Vgs th Max:1.1V; Voltage Vgs th Min:0.5V

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Especificaciones técnicas

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.025 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.1 V
Number of Elements1
On-State Resistance14.6 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max14.6 mΩ
Recovery Time20 ns
Rise Time12 ns
Threshold Voltage1.1 V
Turn-Off Delay Time33 ns
Turn-On Delay Time6 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm

Documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IRL6342PBF.

Newark
Datasheet8 pages13 years ago

Cumplimiento

Clasificación ambiental
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago