Infineon IRF9Z34NPBF
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Especificaciones técnicas
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)-17 A
Current Rating-19 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance620 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance100 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation56 W
Rds On Max100 mΩ
Recovery Time82 ns
Resistance100 mΩ
Rise Time55 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Inventory History
3 month trend: +4.42%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRF9Z34NPBF.
Upverter
Jameco
Farnell
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.332
$ 0.623
Stock
1,713,838
460,710
Authorized Distributors
17
7
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
-17 A
-19 A
Threshold Voltage
-4 V
-2 V
Rds On Max
100 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
56 W
68 W
Input Capacitance
620 pF
620 pF
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF9Z34NPBF.
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;TO-220AB;PD 45W;VGS +/-20V
Descripciones
Descripciones de Infineon IRF9Z34NPBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;TO-220AB;PD 68W;VGS +/-20V
Transistor PNP Mos IRF9Z34/IRF9Z34NPBF INTERNATIONAL RECTIFIER RoHS Ampere=19 V=55 TO220
Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -19 A, TO-220, IRF9Z34NPBF
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single P-Channel 55 V 0.1 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P CHANNEL MOSFET, -55V, 19A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:19A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, P, -55V, -17A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:56W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +4.42%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Especificaciones técnicas
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)-17 A
Current Rating-19 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage-55 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance620 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance100 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation56 W
Rds On Max100 mΩ
Recovery Time82 ns
Resistance100 mΩ
Rise Time55 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRF9Z34NPBF.
Upverter
Jameco
Farnell
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento