onsemi FQU13N06LTU
EOL
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Especificaciones técnicas
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Weight343.08 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance92 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max115 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height6.1 mm
Length6.6 mm
Width2.3 mm
Inventory History
3 month trend: +72.76%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQU13N06LTU.
Newark
element14 APAC
DigiKey
iiiC
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.462
$ 0.559
Stock
415,074
263,668
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
2.5 V
-
Rds On Max
115 mΩ
115 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
350 pF
350 pF
Supply Chain
Lifecycle StatusEOL (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FQU13N06LTU.
Componentes relacionados
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onsemiHUFA76407D3
12 A 60 V 0.117 ohm N-CHANNEL Si POWER MOSFET TO-251AA
Descripciones
Descripciones de onsemi FQU13N06LTU suministradas por sus distribuidores.
MOSFET Transistor, N Channel, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK
MOSFET, N CH, 60V, 11A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.092ohm; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +72.76%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Especificaciones técnicas
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Weight343.08 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance92 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max115 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height6.1 mm
Length6.6 mm
Width2.3 mm
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQU13N06LTU.
Newark
element14 APAC
DigiKey
iiiC
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento