onsemi FQP17P06
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Especificaciones técnicas
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)-17 A
Current Rating-17 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation79 W
Rds On Max120 mΩ
Resistance120 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Inventory History
3 month trend: -5.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQP17P06.
Fairchild Semiconductor
onsemi
Jameco
iiiC
TME
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FQP17P06.
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Descripciones
Descripciones de onsemi FQP17P06 suministradas por sus distribuidores.
P-Channel Power MOSFET, QFET®, -60 V, -17 A, 120 mΩ, TO-220
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:79W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-17A; Current Temperature:25°C; Device Marking:FQP17P06; External Depth:29.03mm; External Length / Height:4.5mm; External Width:9.9mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:TO-220; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -5.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificaciones técnicas
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)-17 A
Current Rating-17 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation79 W
Rds On Max120 mΩ
Resistance120 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi FQP17P06.
Fairchild Semiconductor
onsemi
Jameco
iiiC
TME
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento