onsemi BSS123
Production
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)170 mA
Current15 A
Current Rating170 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance73 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation360 mW
Rds On Max6 Ω
Resistance6 Ω
Rise Time9 ns
Schedule B8541210080
Threshold Voltage1.7 V
Turn-Off Delay Time17 ns
Turn-On Delay Time1.7 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Inventory History
3 month trend: +17.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi BSS123.
TME
Upverter
Fairchild Semiconductor
B+D Enterprises
Newark
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.048
$ 0.069
Stock
11,308,219
15,428,379
Authorized Distributors
10
10
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
170 mA
170 mA
Threshold Voltage
1.7 V
800 mV
Rds On Max
6 Ω
6 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
360 mW
225 mW
Input Capacitance
73 pF
20 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi BSS123.
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Single N-Channel 100V 6 Ohm 0.6 nC OptiMOS Small Signal Mosfet - SOT-23
Descripciones
Descripciones de onsemi BSS123 suministradas por sus distribuidores.
Transistor MOSFET Negative Channel 100 Volt 0.17A 3-Pin SOT-23
N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 170 mA, 6Ω
This N-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 170 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 3.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:360mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170mA; Current Temperature:25°C; Device Marking:BSS123; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360mW; Pulse Current Idm:680mA; SMD Marking:SA; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +17.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Especificaciones técnicas
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)170 mA
Current15 A
Current Rating170 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance73 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation360 mW
Rds On Max6 Ω
Resistance6 Ω
Rise Time9 ns
Schedule B8541210080
Threshold Voltage1.7 V
Turn-Off Delay Time17 ns
Turn-On Delay Time1.7 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi BSS123.
TME
Upverter
Fairchild Semiconductor
B+D Enterprises
Newark
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento