onsemi BCP56T1G
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Especificaciones técnicas
Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency130 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.57 mm
Length6.5 mm
Width3.5 mm
Inventory History
3 month trend: +125%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi BCP56T1G.
Upverter
onsemi
LCSC
SOS electronic
iiiC
RS (Formerly Allied Electronics)
Farnell
Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.129
$ 0.118
Stock
3,561,207
4,903,974
Authorized Distributors
11
11
Mount
-
-
Case/Package
SOT-223-4
SOT-223-4
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
1 A
1 A
Transition Frequency
130 MHz
130 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
25
25
Power Dissipation
1.5 W
1.5 W
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi BCP56T1G.
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onsemi BCP56T3G
Transistor, Bipolar,Si,NPN,Medium Power,VCEO 80VDC,IC 1A,PD 1.5W,SOT-223,hFE 25
Descripciones
Descripciones de onsemi BCP56T1G suministradas por sus distribuidores.
ON Semi BCP56T1G NPN Bipolar Transistor, 1 A, 80 V SOT-223 | ON Semiconductor BCP56T1G
Single Bipolar Transistor, NPN, 80 V, 1 A, 1.5 W, SOT-223, 4 Pins, Surface Mount
Trans GP BJT NPN 80V 1A 1500mW Automotive 4-Pin(3+Tab) SOT-223 T/R
Transistor NPN BCP56/BCP56T1G ON SEMI RoHS Ampere=1 V=100 SOT223
Halfin
NPN SILICON EPITAXIAL TRANSISTOR Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
NPN Bipolar Transistor hFE 40 to 250
Transistor, NPN, 80V, 1A, SOT-223-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:130MHz; Power
Bipolar Transistor, Npn, 80V, Sot-223, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BCP56T1G.
TRANSISTOR, NPN, 80V, 1A, SOT-223-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -65°C
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +125%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Especificaciones técnicas
Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency130 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.57 mm
Length6.5 mm
Width3.5 mm
Documentos
Descargar fichas técnicas y documentación del fabricante para onsemi BCP56T1G.
Upverter
onsemi
LCSC
SOS electronic
iiiC
RS (Formerly Allied Electronics)
Farnell
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento