onsemi 2N7002LT1G

Mosfet; N-ch; Vdss 60VDC; Rds(on) 7.5 Ohms; Id +/-115MA; SOT-23 (TO-236); Pd 225MW; -55
Production

Precio y existencias

Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados

Especificaciones técnicas

Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Technical
Continuous Drain Current (ID)115 mA
Current Rating115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation225 mW
Rds On Max7.5 Ω
Resistance7.5 Ω
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)60 V
Dimensions
Height1.01 mm
Length3.04 mm
Width1.4 mm

Documentos

Descargar fichas técnicas y documentación del fabricante para onsemi 2N7002LT1G.

Upverter
Datasheet4 pages16 years ago
Datasheet4 pages11 years ago
Technical Drawing1 page4 years ago
element14 APAC
Datasheet4 pages7 years ago
Farnell
Datasheet4 pages11 years ago
Datasheet4 pages17 years ago
Newark
Datasheet8 pages0 years ago
Datasheet5 pages4 years ago
Datasheet8 pages0 years ago
TME
Datasheet5 pages4 years ago
Arrow.cn
Datasheet10 pages7 years ago
iiiC
Datasheet4 pages11 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages16 years ago

Historial de existencias

3 month trend:
-56.12%

Componentes alternativos

Este componente
Componentes alternativos
Price @ 1000
$ 0.041
$ 0.022
$ 0.022
Stock
32,403,773
81,650,419
81,650,419
Authorized Distributors
9
11
11
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
115 mA
115 mA
115 mA
Threshold Voltage
1 V
2.5 V
2.5 V
Rds On Max
7.5 Ω
7.5 Ω
7.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
225 mW
300 mW
300 mW
Input Capacitance
50 pF
50 pF
50 pF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi 2N7002LT1G.

Componentes relacionados

Descripciones

Descripciones de onsemi 2N7002LT1G suministradas por sus distribuidores.

MOSFET; N-Ch; VDSS 60VDC; RDS(ON) 7.5 Ohms; ID +/-115mA; SOT-23 (TO-236); PD 225mW; -55
SOT23, N-Channel MOSFET - 60V 115MA 7.5Ohm SOT23, N-Ch Mosfet - 60V 115MA 7.5O
2N7002L: Small Signal MOSFET 60V 115mA 7.5 Ohm Single N-Channel SOT-23
N-Channel 60 V 7.5 Ohm 225 mW Surface Mount Small Signal MOSFET - SOT-23-3
Transistor MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
N CHANNEL MOSFET, 60V, 115mA SOT-23, FULL REEL
MOSFET - N-Channel, Small Signal, SOT-23 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Alias de fabricantes

onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • 2N7002-LT1G
  • 2N7002LT1 G
  • 2N7002LT1G.
  • 2N7002LT1G......

Especificaciones técnicas

Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Technical
Continuous Drain Current (ID)115 mA
Current Rating115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation225 mW
Rds On Max7.5 Ω
Resistance7.5 Ω
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)60 V
Dimensions
Height1.01 mm
Length3.04 mm
Width1.4 mm

Documentos

Descargar fichas técnicas y documentación del fabricante para onsemi 2N7002LT1G.

Upverter
Datasheet4 pages16 years ago
Datasheet4 pages11 years ago
Technical Drawing1 page4 years ago
element14 APAC
Datasheet4 pages7 years ago
Farnell
Datasheet4 pages11 years ago
Datasheet4 pages17 years ago
Newark
Datasheet8 pages0 years ago
Datasheet5 pages4 years ago
Datasheet8 pages0 years ago
TME
Datasheet5 pages4 years ago
Arrow.cn
Datasheet10 pages7 years ago
iiiC
Datasheet4 pages11 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages16 years ago

Cumplimiento

Clasificación ambiental
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declaraciones de cumplimiento
Rohs Statement1 page11 years ago
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago