Vishay SI4511DY-T1-GE3

SI4511DY-T1-GE3 Dual N/p-channel Mosfet Transistor, 3.7 A, 7.2 A, 20V, 8-PIN SOIC
Obsolete
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DistributorSKUMinPkg
Farnell
2
SI4511DY-T1-GE301Cut Tape
6h
Win SourceWS-SI4511DY-T1-GE37.45735
5h
AnlinkdaSI4511DY-T1-GE319.276
1d
RC ElectronicsSI4511DY-T1-GE317.3071
>1wk
Fly-Wing TechnologySI4511DY-T1-GE31.735
1d

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Laden Sie Datenblätter und Herstellerdokumentation für Vishay SI4511DY-T1-GE3 herunter.

IHS

Datasheet9 SeitenVor 8 Jahren

element14 APAC

Farnell

RS (Formerly Allied Electronics)

Newark

Lieferkette

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Beschreibungen

Beschreibungen von Vishay SI4511DY-T1-GE3, die von den Distributoren bereitgestellt werden.

SI4511DY-T1-GE3 DUAL N/P-CHANNEL MOSFET TRANSISTOR,3.7 A,7.2 A,20V,8-PIN SOIC
RS (Formerly Allied Electronics)
Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin SOIC N T/R
Verical
Small Signal Field-Effect Transistor, 7.2A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
Transistor; Transistor Polarity:Dual N & P Channel; Drain Source Voltage, Vds:20V; Power Dissipation, Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Package/Case:8-SOIC; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes
Newark
MOSFET, NP-CH, 20V, SO8; Transistor Polarity:N and P Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.6A; Power Dissipation Pd:2W; Voltage Vgs Max:16V
element14 APAC

Bilder

Farnell
RS (Formerly Allied Electronics)
Newark
iiiC

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