Beschreibungen von Vishay IRF640PBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3
Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-220, Through Hole
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 200V, 18A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: Yes |Vishay IRF640PBF.
MOSFET, N, 200V, 18A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:72A; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:200V
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:TO-220; Power Dissipation Pd:125W; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V