Renesas HIP2103FRTAAZ-T

Half Bridge MOSFET 1A 4.5V~14V 1A DFN-8-EP(3x3) Gate Drive ICs ROHS
$ 1.555
Production
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Datasheet31 SeitenVor 7 Jahren
Datasheet21 SeitenVor 15 Jahren

Integrated Device Technology

Renesas

Newark

CAD-Modelle

Modellinformationen
Beschafft vonRenesas
VeröffentlichungsdatumAug 13, 2025
IPC-konformIPC-7351B
Überarbeitung des StyleguidesVersion 1.0 - Nov 1, 2024
DatenblattquelleVersion 2.0 - Feb 25, 2021
Verifizierung

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Price @ 1000
$ 1.555
$ 1.339
Stock
674,151
305,131
Authorized Distributors
3
6
Case/Package
DFN
DFN
Number of Pins
8
8
Channel Type
Independent
Independent
Number of Drivers
2
2
Max Output Current
1 A
1 A
Rise Time
21 ns
21 ns
Fall Time
17 ns
17 ns
Min Supply Voltage
4.5 V
4.5 V
Max Supply Voltage
14 V
14 V
Max Power Dissipation
550 mW
550 mW

Lieferkette

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8540000000
Introduction Date2014-04-02
Lifecycle StatusProduction (Last Updated: 2 months ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)

Beschreibungen

Beschreibungen von Renesas HIP2103FRTAAZ-T, die von den Distributoren bereitgestellt werden.

Half Bridge MOSFET 1A 4.5V~14V 1A DFN-8-EP(3x3) Gate Drive ICs ROHS
60V, 1A/2A Peak, Half Bridge Driver with 4V UVLO
Half Bridge Driver, 3 Phase Dc Brushless, Tdfn8, Full Reel
RoHS Compliant Matte Tin (Sn) - annealed e3 Surface Mount IC Gate Driver 50.008559mg 60V 2.3W 200mA
MOTOR DRIVER, TDFN-8, -40 TO 125DEG C;
Half Bridge Based MOSFET Driver
IC GATE DRVR HALF-BRIDGE 8TDFN
The HIP2103 is a half-bridge driver designed for applications using DC motors, 3-phase brushless DC motors, or other similar loads. The two inputs (HI and LI) independently control the high-side driver (HO) and the low-side driver (LO). HI and LI can be configured to enable/disable the device, which lowers the number of connections to a microcontroller and the cost. The low IDD bias current in the Sleep mode prevents battery drain when the device is not in use, which eliminates the need for an external switch to disconnect the driver from the battery. Integrated pull-down resistors on all of the inputs (LI, HI, VDen, and VCen) reduce the need for external resistors. An active-low resistance pull-down on the LO output ensures that the low-side bridge FET remains off during the Sleep mode or when VDD is below the Undervoltage Lockout (UVLO) threshold.

Aliasnamen des Herstellers

Renesas verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Renesas ist möglicherweise auch unter den folgenden Namen bekannt:

  • Renesas Electronics
  • Renesas Electronics America Inc
  • Renesas Electronics America
  • RENESA
  • REN
  • RENES
  • RENESAS TECHNOLOGY CORP
  • RENESAS TECHNOLOGY
  • Renesas Electronics Corporation
  • RENESAS ELECTRONICS CORP
  • RENSAS
  • RENASAS
  • Renesas / Intersil
  • RNS
  • RENESAS-PB
  • RENESASTEC
  • RENESES
  • Renesas Technology America
  • Renesas Design Germany GmbH
  • Renesas / IDT
  • RENESASE
  • RENESAS TECHNOLOGY HONG KONG
  • Renesas Electronics Operations Services Limited
  • RENEASAS
  • RENESAS/M