onsemi RFD16N06LESM9A

MOSFET Transistor, N Channel, 16 A, 60 V, 47 mohm, 5 V, 3 V

N-Channel Logic Level Power MOSFET 60V, 16A, 47mΩ

Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

MOSFET, N CHANNEL, 60V, 16A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 3V;

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49027.