onsemi NDB5060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 26A, 35mΩ
$ 1.253
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Rochester ElectronicsNDB5060L4.000
23h
DigiKey
2
NDB5060LCT-ND5221Cut Tape
Newark
2
NDB5060L01Cut Tape
Onlinecomponents.comNDB5060L0200Bulk
Master ElectronicsNDB5060L0200

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IHS

Datasheet7 SeitenVor 2 Jahren
Datasheet12 SeitenVor 28 Jahren

Master Electronics

onsemi

Future Electronics

Fairchild Semiconductor

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Lieferkette

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-10-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi NDB5060L, die von den Distributoren bereitgestellt werden.

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 26A, 35mΩ
onsemi
Transistor, mosfet, n-Channel,60V V(Br)Dss,26A I(D),to-263Ab Rohs Compliant: Yes |Onsemi NDB5060L
Newark
Trans MOSFET N-CH 60V 26A Automotive 3-Pin(2+Tab) D2PAK T/R
Verical
N-Channel 60 V 50 mO 3.7 W Surface Mount Power Mosfet - TO-263
Future Electronics
Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Fairchild Semiconductor

Bilder

element14 APAC
Future Electronics
iiiC
Rochester Electronics
LZChips

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