onsemi MUN5211T1G
$ 0.04
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5211T1G | 117.000 | 3K | 16h | ||||||||
| Newark | MUN5211T1G | 42.105 | 5 | Cut Tape | ||||||||
| Arrow Electronics | MUN5211T1G | 13.829 | 1 | |||||||||
| Verical | MUN5211T1G | 21.000 | 3K | |||||||||
| Future Electronics | MUN5211T1G | 21.000 | 3K | Tape & Reel |
Bestandsverlauf
3-Monats-Trend: -3.54%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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1 Teil verfügbar
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi MUN5211T1G herunter.
Offizielles DatenblattVor 2 Jahren
CAD-Modelle
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Price @ 1000
$ 0.04
$ 0.044
Stock
6,680,553
156,687
Authorized Distributors
6
2
Mount
-
-
Case/Package
SOT-323-3
-
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
-
-
hFE Min
35
35
Power Dissipation
310 mW
202 mW
Lieferkette
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Beschreibungen
Beschreibungen von onsemi MUN5211T1G, die von den Distributoren bereitgestellt werden.
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Bipolar Transistors (BJT); MUN5211T1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
DIGITAL TRANSISTOR (BRT) Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
MUN5211 Series 50 V 100 mA R1-10 kO R2-10 kO NPN Digital Transistor - SOT-323
NPN Bipolar Digital Transistor (BRT)
35@5mA,10V 1 NPN - Pre Biased 202mW 100mA 50V 500nA SOT-323(SC-70) Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
TRANSISTOR, RF, NPN, 50V, SOT-323-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm;
Brt Transistor, 50V, 10K/10Kohm, Sc70, Full Reel; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:10Kohm; Resistor R2 Base-Emisor:10Kohm; Núm. De Contactos:3 |Onsemi MUN5211T1G
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -3.54%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageSOT-323-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation310 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation310 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi MUN5211T1G herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen