onsemi MMBT2222ATT1G
$ 0.037
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMBT2222ATT1G | 1.539.000 | 3K | Tape & Reel | ||||||||
| Avnet | 10N9479 | 10.994 | 1 | 19h | ||||||||
| Newark | MMBT2222ATT1G | 10.994 | 1 | Cut Tape | ||||||||
| Master Electronics | MMBT2222ATT1G | 57.000 | 3K | |||||||||
| Onlinecomponents.com | MMBT2222ATT1G | 57.000 | 3K | Bulk |
Bestandsverlauf
3-Monats-Trend: -15.55%
CAD-Modelle
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Datenblätter und Dokumente
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CAD-Modelle
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Price @ 1000
$ 0.037
$ 0.036
$ 0.036
Stock
9,985,394
112,907,117
112,907,117
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-416
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
1 V
300 mV
300 mV
hFE Min
40
75
75
Power Dissipation
150 mW
225 mW
225 mW
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Beschreibungen
Beschreibungen von onsemi MMBT2222ATT1G, die von den Distributoren bereitgestellt werden.
Bipolar Transistors (BJT); MMBT2222ATT1G; ON SEMICONDUCTOR; NPN; 40 V; 600 mA; 3
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 150 mW, SOT-416, Surface Mount
ON Semi MMBT2222ATT1G NPN Bipolar Transistor; 0.6 A; 40 V; 3-Pin SOT-416
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
40V 150mW 100@150mA,10V 600mA NPN SOT-523(SC-75) Bipolar Transistors - BJT ROHS
MMBT Series 40 V 600 mA SMT NPN Silicon General Purpose Transistor - SC-75
NPN Bipolar Junction Transistor
1V@ 50mA,500mA NPN 150mW 6V 10nA 75V 40V 600mA SC-75,SOT-416 1.6mm*800¦Ìm*800¦Ìm
General Purpose Transistors NPN Silicon Ic=600mA Vceo=40V P=150mW SOT416
TRANSISTOR, NPN, 40V, 600MA, SOT-416-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 150mW; DC Collector Current: 600mA; DC Current Gain hFE: 35hFE;
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications.
BIPOLAR TRANSISTOR, NPN, 40V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: -15.55%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-416
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)40 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min40
Max Breakdown Voltage40 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)75 V
Dimensions
Height800 µm
Length1.65 mm
Width900 µm
Datenblätter und Dokumente
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Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen