onsemi DTC114EET1G
$ 0.039
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | DTC114EET1G | 54.000 | 3K | 1d | ||||||||
| Newark | DTC114EET1G | 6.557 | 1 | Cut Tape | ||||||||
| Arrow Electronics | DTC114EET1G | 265 | 1 | |||||||||
| Verical | DTC114EET1G | 30.000 | 3K | |||||||||
| Future Electronics | DTC114EET1G | 288.000 | 3K | Tape & Reel |
Bestandsverlauf
3-Monats-Trend: +109%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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CAD-Modelle
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Price @ 1000
$ 0.039
$ 0.044
Stock
8,548,589
705,000
Authorized Distributors
6
3
Mount
-
Surface Mount
Case/Package
SOT-416
-
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
35
35
Power Dissipation
-
200 mW
Lieferkette
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Verwandte Teile
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Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
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Bipolar Pre-Biased / Digital Transistor, NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
ToshibaRN1107,LF(CT
300mV@ 250¦ÌA,5mA NPN - Pre-Biased 100mW 6V 500nA 50V 100mA SOT-416-3 1.6mm*800¦Ìm*700¦Ìm
Beschreibungen
Beschreibungen von onsemi DTC114EET1G, die von den Distributoren bereitgestellt werden.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
NPN Bipolar Digital Transistor (BRT)
DTC Series 50 V 100 mA 10 kOhm NPN Silicon Bias Resistor Transistor - SC-75
DTC114EET1G NPN DIGI TRANSISTOR, 100MA 50 V 10 KOHM, RATIO OF 1, 3-PIN SOT-416
35@5mA,10V 1 NPN - Pre Biased 200mW 100mA 50V 500nA SOT-523(SC-75) Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R
Bias Resistor Transistor, Npn, 50V, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes |Onsemi DTC114EET1G.
BIAS Resistor Transistor, NPN, 50V; COLL; BIAS Resistor Transistor, NPN, 50V; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-416
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Bestandsverlauf
3-Monats-Trend: +109%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageSOT-416
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating70 mA
Element ConfigurationSingle
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height750 µm
Length1.6 mm
Width800 µm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für onsemi DTC114EET1G herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen