onsemi HUF75639P3

Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB
$ 1.376
Production
HerstellerseiteDatenblatt

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DistributorSKUMinPkg
Arrow ElectronicsHUF75639P31501
VericalHUF75639P31506
DigiKeyHUF75639P3-ND11Tube
NewarkHUF75639P30200
Onlinecomponents.comHUF75639P3050Bulk

Datenblätter und Dokumente

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IHS

Datasheet15 SeitenVor 3 Jahren
Datasheet15 SeitenVor 3 Jahren

Farnell

Upverter

Fairchild Semiconductor

onsemi

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onsemiHUF75639P3
onsemiHUF75639P3_NL
Price @ 1000
$ 1.376
$ 1.16
Stock
179,164
27,663
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-263-3
-
Drain to Source Voltage (Vdss)
100 V
-
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
4 V
-
Rds On Max
25 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
200 W
-
Input Capacitance
2 nF
-

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Beschreibungen

Beschreibungen von onsemi HUF75639P3, die von den Distributoren bereitgestellt werden.

Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB
Jameco
N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
Future Electronics
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
onsemi
Trans MOSFET N-CH 100V 56A 3-Pin(3+Tab) TO-220AB Rail
Verical
100 V, 56 A, 0.025 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
MOSFET,N CH,100V,56A,TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Farnell
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Fairchild Semiconductor

Bilder

RS
element14 APAC
TME
Newark
iiiC
LZChips
Future Electronics
Rochester Electronics

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