onsemi HUF75329D3ST

Name: onsemi HUF75329D3ST
Brand: onsemi
SKU: HUF75329D3ST

N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ

$ 0.554

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Distributor		SKU		Min	Pkg
Rochester Electronics		HUF75329D3ST	900					0,549	0,455	0,406	21h
DigiKey	3	HUF75329D3STFSCT-ND	1.049	1	Cut Tape	1,770	1,122	0,750	0,540	0,540
Verical		HUF75329D3ST	692	608					0,569	0,508
Newark	2	HUF75329D3ST	0	2500	Tape & Reel					0,640
Onlinecomponents.com		HUF75329D3ST	0	625	Bulk				0,646	0,443

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3-Monats-Trend: -1.38%

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Upverter

Technical Drawing1 SeiteVor 3 Jahren

Farnell

Newark

Master Electronics

element14 APAC

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3-Monats-Trend:

-1.38%

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onsemiHUF75329D3ST

onsemiHUF75329D3S

Price @ 1000

$ 0.554

$ 1.046

Stock

333,073

79,406

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-252-3

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

20 A

Threshold Voltage

Rds On Max

26 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

128 W

Input Capacitance

1.06 nF

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-03-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi HUF75329D3ST, die von den Distributoren bereitgestellt werden.

N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ

onsemi

N-Channel 20 A 55 V 0.026 Ohm SMT UltraFET Mosfet- TO-252-3

Future Electronics

Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V; Power Dissipation Pd:128W ;RoHS Compliant: Yes

Newark

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.

Fairchild Semiconductor

Bilder

Newark

Conrad

Future Electronics

Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

HUF75329D3ST.

Bestandsverlauf

3-Monats-Trend: -1.38%

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Technische Spezifikationen

Physical

Case/PackageTO-252-3

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight260.37 mg

Technical

Continuous Drain Current (ID)20 A

Current Rating20 A

Drain to Source Breakdown Voltage55 V

Drain to Source Resistance26 mΩ

Drain to Source Voltage (Vdss)55 V

Element ConfigurationSingle

Fall Time33 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.06 nF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation128 W

Min Breakdown Voltage55 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Channels1

Number of Elements1

PackagingTape & Reel (TR)

Power Dissipation128 W

Rds On Max26 mΩ

Resistance26 MΩ

Rise Time30 ns

Turn-Off Delay Time10 ns

Turn-On Delay Time7 ns

Voltage Rating (DC)55 V

Dimensions

Height2.517 mm

Length6.73 mm

Width2.39 mm