onsemi HGTP5N120BND

Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
$ 1.406
EOL
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DistributorSKUMinPkg
Verical
3
HGTP5N120BND750200
AvnetHGTP5N120BND2500
15h
Rochester ElectronicsHGTP5N120BND34.350
13h
Flip ElectronicsHGTP5N120BND2
6d
Microchip USAHGTP5N120BND162150Tube
6h

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2003-04-16
LTD Date2003-12-31
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi HGTP5N120BND, die von den Distributoren bereitgestellt werden.

Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
Verical
HGTP5N120BND Series 1200 V 21 A Flange Mount N-Channel IGBT - TO-220AB
Future Electronics
167W 21A 1.2kV NPT (non-penetrating type) TO-220AB-3 IGBT Transistors / Modules ROHS
EBEE
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
IHS
RAIL / 1200V,21A,NPT SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST
Newark
HGTP5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and motor control.
Fairchild Semiconductor

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iiiC
LZChips
Future Electronics

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