onsemi HGTG7N60A4D

Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
Flip ElectronicsHGTG7N60A4D900
7d
AvnetHGTG7N60A4D0506
1d
Win SourceWS-HGTG7N60A4D4.10016
1h
Worldway ElectronicsHGTG7N60A4D11.0077Tube
1d
IC Components Ltd.HGTG7N60A4D4.000
6h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für onsemi HGTG7N60A4D herunter.

Newark

Datasheet14 SeitenVor 4 Jahren

IHS

Upverter

onsemi

Fairchild Semiconductor

Bestandsverlauf

3-Monats-Trend:
+0.00%
Powered bySpectra logo

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-03-24
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

Verwandte Teile

onsemiFGH20N6S2D
TO-247, COMP, N-CH 600V SMPS II SERIES IGBT W/STEALTH DIODE
Details
onsemiFGH20N6S2
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.7V @ 15V 7A 28A 125W 7.7ns/87ns
Details
InfineonIRG4PC30SPBF
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
Details
InfineonIRG4PC30FPBF
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
Details
InfineonIRG4PC40KDPBF
IRG4P Series Ultrafast Soft Recovery Diode Through Hole IGBT - TO-247-3
Details
STMicroelectronicsSTGW20V60F
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Details

Beschreibungen

Beschreibungen von onsemi HGTG7N60A4D, die von den Distributoren bereitgestellt werden.

Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail
Verical
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247
IHS
125W 1.9V withbuilt-indiode 600V 34A TO-247-3 15.87mm*4.82mm*20.82mm
UnikeyIC
Single Igbt, 600V, 34A; Corriente De Colector Dc:34A; Tensión De Saturación Colector-Emisor Vce(On):1.9V; Disipación De Potencia Pd:125W; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:3; Temperatura De Trabajo Máx.:150°C |Onsemi HGTG7N60A4D
Newark
The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Fairchild Semiconductor

Bilder

Newark
Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd