onsemi FQU2N90TU-WS

Power Mosfet, N-channel, Qfet®, 900 V, 1.7 A, 7.2 Ω, Ipak
$ 0.571
EOL
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VericalFQU2N90TU-WS1.410718
Rochester ElectronicsFQU2N90TU-WS75.410
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Datasheet9 SeitenVor 4 Jahren

Newark

onsemi

Fairchild Semiconductor

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-08
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Beschreibungen

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Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK
onsemi
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
IHS
Mosfet, N-Ch, 900V, 1.7A, Ipak; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQU2N90TU-WS
Newark
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

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