This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

Bilder

element14 APAC

Rochester Electronics

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ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
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onsemi / Fairchild
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ON Semiconductor Corporation
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Bestandsverlauf

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Technische Spezifikationen

Physical

Case/PackageTO-251-3

Contact PlatingTin

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight343.08 mg

Technical

Continuous Drain Current (ID)1.6 A

Current Rating1.6 A

Drain to Source Breakdown Voltage1 kV

Drain to Source Resistance9 Ω

Drain to Source Voltage (Vdss)1 kV

Element ConfigurationSingle

Fall Time35 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance520 pF

Max Operating Temperature150 °C

Max Power Dissipation50 W

Min Breakdown Voltage1 kV

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation2.5 W

Rds On Max9 Ω

Rise Time30 ns

Turn-Off Delay Time25 ns

Turn-On Delay Time13 ns

Voltage Rating (DC)1 kV

Dimensions

Height7.57 mm

Length6.8 mm

Width2.5 mm

Datenblätter und Dokumente

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