onsemi FQPF7N80C

Power Mosfet, N-channel, Qfet®, 800 V, 7 A, 1.9 Ω, TO-220F
$ 1.083
Obsolete
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DistributorSKUMinPkg
Verical
3
FQPF7N80C1.000259
Rochester Electronics
2
FQPF7N80C4.430
8h
Flip ElectronicsFQPF7N80C42.000
6d
FarnellFQPF7N80C01
1d
Win SourceWS-FQPF7N80C11.09440
9h

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Datasheet10 SeitenVor 12 Jahren

Newark

onsemi

element14 APAC

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-05
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi FQPF7N80C, die von den Distributoren bereitgestellt werden.

Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220F
onsemi
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
Verical
800 V N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ComSIT Distribution GmbH
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Bilder

South Microelectronics
iiiC
iiiC
Farnell
Rochester Electronics

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