onsemi FQPF4N90C

Name: onsemi FQPF4N90C
Brand: onsemi
SKU: FQPF4N90C

Power Mosfet, N-channel, Qfet®, 900 V, 4 A, 4.2 Ω, TO-220F

$ 0.811

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Distributor	SKU		Min	Pkg
Rochester Electronics	FQPF4N90C	120.454					0,874	0,726	0,647	22h
DigiKey	FQPF4N90C-ND	834	1	Tube	2,320	2,320	1,015	0,812	0,812
Avnet	FQPF4N90C	0	1K							1d
Farnell	FQPF4N90C	0	1		1,694*	1,439*	1,237*	0,817*	0,801*	21h
Mouser	512-FQPF4N90C	920	1	Tube	2,320	1,140	1,020	0,811	0,738

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3-Monats-Trend: -1.07%

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Technical Drawing1 SeiteVor 5 Jahren

Farnell

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3-Monats-Trend:

-1.07%

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onsemiFQPF4N90C

onsemiFQPF3N90

Price @ 1000

$ 0.811

$ 1.35

Stock

697,093

283,637

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

900 V

Continuous Drain Current (ID)

4 A

2.1 A

Threshold Voltage

5 V

Rds On Max

4.2 Ω

4.25 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

47 W

43 W

Input Capacitance

960 pF

910 pF

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-06-30

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Beschreibungen

Beschreibungen von onsemi FQPF4N90C, die von den Distributoren bereitgestellt werden.

Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F

onsemi

Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F

Future Electronics

Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220F Tube

Verical

Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

Bilder

Augswan

TME

South Microelectronics

Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

FQPF4N90C.

Bestandsverlauf

3-Monats-Trend: -1.07%

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Symbol, Footprint und 3D STEP herunterladen

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Technische Spezifikationen

Physical

Case/PackageTO-220-3

Contact PlatingTin

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight2.27 g

Technical

Continuous Drain Current (ID)4 A

Current Rating4 A

Drain to Source Breakdown Voltage900 V

Drain to Source Resistance4.2 Ω

Drain to Source Voltage (Vdss)900 V

Element ConfigurationSingle

Fall Time35 ns

Gate to Source Voltage (Vgs)30 V

Input Capacitance960 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation47 W

Min Breakdown Voltage900 V

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

Power Dissipation47 W

Rds On Max4.2 Ω

Rise Time50 ns

Schedule B8541290080

Threshold Voltage5 V

Turn-Off Delay Time40 ns

Turn-On Delay Time25 ns

Voltage Rating (DC)900 V

Dimensions

Height19.5 mm

Length10.16 mm

Width4.7 mm