onsemi FQPF2N60C

Power Mosfet, N-channel, Qfet®, 600 V, 2 A, 4.7 Ω, TO-220F
$ 0.697
EOL
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Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
AvnetFQPF2N60C10.455910
16h
Verical
5
FQPF2N60C4.172447
Rochester Electronics
2
FQPF2N60C12.360
14h
Flip ElectronicsFQPF2N60C10.455
9h
FarnellFQPF2N60C01
14h

Datenblätter und Dokumente

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Technical Drawing1 SeiteVor 5 Jahren

Farnell

IHS

onsemi

Newark

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onsemiFQPF2N60C
onsemiFQPF2N60
Price @ 1000
$ 0.697
$ 0.483
Stock
256,244
145,827
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
2 A
1.6 A
Threshold Voltage
4 V
-
Rds On Max
4.7 Ω
4.7 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
23 W
28 W
Input Capacitance
235 pF
350 pF

Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-02
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Beschreibungen

Beschreibungen von onsemi FQPF2N60C, die von den Distributoren bereitgestellt werden.

Power MOSFET, N-Channel, QFET®, 600 V, 2 A, 4.7 Ω, TO-220F
onsemi
N-Channel 600 V 4.7 Ohm Flange Mount Mosfet - TO-220F
Future Electronics
600V 2A 4.7´Î@10V1A 23W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Dasenic
Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Semicontronic
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:23W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:23W; Power Dissipation Pd:23W; Pulse Current Idm:8A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
element14 APAC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Bilder

Augswan
RS
TME
Farnell
South Microelectronics
iiiC
iiiC
Future Electronics
Conrad
LZChips
Rochester Electronics

Aliasnamen des Herstellers

onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd