onsemi FQP6N80
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
CAD-Modelle
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-11-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
Beschreibungen
Beschreibungen von onsemi FQP6N80, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 800V 5.8A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 5.8A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:158W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:5.8A; On State Resistance Max:1.95ohm; Package / Case:TO-220; Power Dissipation Pd:158W; Power Dissipation Pd:158W; Pulse Current Idm:23.2A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.8A; Resistance, Rds On:1.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technische Spezifikationen
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)5.8 A
Current Rating5.8 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.95 Ω
Drain to Source Voltage (Vdss)800 V
Dual Supply Voltage800 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.5 nF
Max Operating Temperature150 °C
Max Power Dissipation158 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation158 W
Rds On Max1.95 Ω
Resistance1.95 Ω
Rise Time70 ns
Threshold Voltage5 V
Turn-Off Delay Time65 ns
Voltage Rating (DC)800 V