onsemi FQA90N15

N-Channel Power MOSFET, QFET®, 150V, 90A, 18mΩ, TO-3P
$ 3.015
EOL
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DistributorSKUMinPkg
VericalFQA90N1542596
Rochester ElectronicsFQA90N15425
1d
Farnell
2
FQA90N15.01
16h
element14 APACFQA90N1501
6h
Microchip USAFQA90N15256150Tray
8h

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Datasheet8 SeitenVor 12 Jahren
Datasheet0 SeitenVor 0 Jahren

onsemi

Farnell

Fairchild Semiconductor

element14 APAC

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Alternative Teile

Dieser Teil
Alternative Teile
onsemiFQA90N15
onsemiFQA90N15-F109
Price @ 1000
$ 3.015
$ 2.95
Stock
273,538
132,859
Authorized Distributors
4
5
Mount
Through Hole
Through Hole
Case/Package
-
-
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
90 A
90 A
Threshold Voltage
4 V
-
Rds On Max
18 mΩ
18 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
375 W
6 W
Input Capacitance
8.7 nF
8.7 nF

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-05-26
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Beschreibungen

Beschreibungen von onsemi FQA90N15, die von den Distributoren bereitgestellt werden.

N-Channel Power MOSFET, QFET®, 150V, 90A, 18mΩ, TO-3P
onsemi
150 V, 90 A, 18 MILLI OHM N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 90A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ComSIT Distribution GmbH
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:150V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V
element14 APAC
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:90A; Resistance, Rds On:0.018ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3P; Termination ;RoHS Compliant: Yes
Newark
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Bilder

iiiC
element14 APAC
Rochester Electronics
UTSource
LZChips

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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
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  • ON Semiconductor Corporation
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