onsemi FDU2572
$ 1.181
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-05-14
Lifecycle StatusProduction (Last Updated: 1 month ago)
LTB Date2011-03-02
LTD Date2011-09-02
Verwandte Teile
Rochester ElectronicsIPS105N03LG
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
onsemiHUF75329D3
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 20A IPAK
STMicroelectronicsSTU150N3LLH6
STU150N3LLH6 N-channel MOSFET Transistor, 80 A, 30 V, 3-Pin TO-251
Beschreibungen
Beschreibungen von onsemi FDU2572, die von den Distributoren bereitgestellt werden.
TO-251, SINGLE, N-CH, 150V, 56MOHM ULTRAFET TRENCH MOSFET
Trans MOSFET N-CH 150V 4A 3-Pin(3+Tab) TO-251 Tube
135W(Tc) 4V@ 250¦ÌA 34nC@ 10V 1individualNChannel 150V 54m¦¸@ 9A,10V 1.77pF@25V IPAK Through hole mounting
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technische Spezifikationen
Physical
Case/PackageTO-251
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4 A
Current Rating29 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.77 nF
Max Operating Temperature175 °C
Max Power Dissipation135 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation135 W
Rds On Max54 mΩ
Rise Time14 ns
Turn-Off Delay Time31 ns
Voltage Rating (DC)150 V