onsemi FCU900N60Z
$ 0.906
EOL
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-08-01
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2024-04-02
LTD Date2024-10-02
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
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Beschreibungen
Beschreibungen von onsemi FCU900N60Z, die von den Distributoren bereitgestellt werden.
N-Channel Power MOSFET, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK
Single N-Channel 600 V 0.90 Ohm 17 nC 52 W Silicon Through Hole Mosfet - TO-251
FAIRCHILD SEMICONDUCTOR FCU900N60ZPower MOSFET, N Channel, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
N-CHANNEL SUPERFET II MOSFET Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N-CH, 600V, 4.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
Case/PackageTO-251
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight539 mg
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage675 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance710 pF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation52 W
Rds On Max900 mΩ
Rise Time5.3 ns
Threshold Voltage2.5 V
Turn-Off Delay Time33.6 ns
Turn-On Delay Time10.9 ns
Dimensions
Height7.57 mm
Length6.8 mm
Width2.5 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen