onsemi FDS9400A

P-Channel 30 V 130 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
$ 0.547
Obsolete
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Verical
4
FDS9400A2.098570
AvnetFDS9400A3.7284546
7h
Rochester ElectronicsFDS9400A24.694
5h
Flip ElectronicsFDS9400A3.728
6d
Win SourceWS-FDS9400A4.13835
6h

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Datasheet5 SeitenVor 24 Jahren
Datasheet0 SeitenVor 0 Jahren

onsemi

Farnell

Newark

Fairchild Semiconductor

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-18
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi FDS9400A, die von den Distributoren bereitgestellt werden.

P-Channel 30 V 130 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Future Electronics
P-Channel PowerTrench® MOSFET, 30V, -3.4A, 130mΩ
onsemi
Trans MOSFET P-CH 30V 3.4A 8-Pin SOIC N T/R
Verical
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Fairchild Semiconductor
MOSFET, P CH, -30V, -3.4A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
Farnell

Bilder

TME
element14 APAC
iiiC
Rochester Electronics
Conrad

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