onsemi FDS6699S

N-Channel 30 V 3.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
EOL
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DistributorSKUMinPkg
AvnetFDS6699S554.5001
2d
Flip ElectronicsFDS6699S554.500
6d
Farnell
2
FDS6699S01Cut Tape
1d
element14 APAC
2
FDS6699S01Cut Tape
13h
Component Stockers USAFDS6699S17.167
14h

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onsemi

Datasheet7 SeitenVor 2 Jahren
Datasheet0 SeitenVor 0 Jahren
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Fairchild Semiconductor

Future Electronics

Farnell

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Lieferkette

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-01-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-03-31
LTD Date2023-03-31
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Beschreibungen

Beschreibungen von onsemi FDS6699S, die von den Distributoren bereitgestellt werden.

N-Channel 30 V 3.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Future Electronics
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,21A I(D),SO
Newark
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:21A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:106A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
element14 APAC
The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Fairchild Semiconductor

Bilder

TME
element14 APAC
Components Direct
Future Electronics
Rochester Electronics
Conrad

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